Design of DC-3.4GHz Ultra-Wideband Low Noise Amplifier with Parasitic Parameters of FET
نویسندگان
چکیده
This paper presents two low noise amplifier (LNA) circuit topologies for ultra-wideband wireless communications in 0.13μm PHEMT GaAs technology. They are with source inductive degeneration and source grounded, respectively. The simulation results show that the LNA involving source inductor possesses good performances at 120MHz-3GHz. Its noise figure(NF) and voltage standing wave ratios(VSWRs) are less than 1.173dB and 2, respectively, while the maximum gain of 12.75dB is achieved with 0.63dB flatness. In contrast, the other LNA provides a decreasing gain varying between 10.992dB and 11.964B in a wider frequency range of DC-3.4GHz. NF and VSWRs are better than 1.287dB and 2, respectively.
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